A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
On the nature of majority and minority traps in β-Ga2O3: A review
In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
Tin Doping Induced High‐Performance Solution‐Processed Ga2O3 Photosensor toward Neuromorphic Visual System
P Li, X Shan, Y Lin, X Meng, J Ma… - Advanced Functional …, 2023 - Wiley Online Library
Ga2O3 is an emerging wide‐bandgap semiconductor with high deep ultraviolet absorption,
tunable persistent photoconductivity, and excellent stability toward electric fields, making it a …
tunable persistent photoconductivity, and excellent stability toward electric fields, making it a …
Measurement and analysis of photoluminescence in GaN
MA Reshchikov - Journal of applied physics, 2021 - pubs.aip.org
Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
Toward gallium oxide power electronics
MJ Tadjer - Science, 2022 - science.org
Efficient, ultrahigh-voltage power-conversion electronics (with voltages> 20 kV) require
semiconductors with an energy gap much larger than that of silicon. The wide-bandgap …
semiconductors with an energy gap much larger than that of silicon. The wide-bandgap …
Oxygen vacancies modulating the photodetector performances in ε-Ga 2 O 3 thin films
By acting as the trapping centers during charge carrier transfer, oxygen vacancy (VO) plays
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …
[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
AY Polyakov, VI Nikolaev, EB Yakimov, F Ren… - Journal of Vacuum …, 2022 - pubs.aip.org
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
Deep-level defects in gallium oxide
As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …
properties and has been an emerging candidate in the applications of power electronics and …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …