An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

This paper presents an overview of the physics, modeling, and circuit implications of RF
broad-band noise, low-frequency noise, and oscillator phase noise in SiGe heterojunction …

In this article, the large-signal, small-signal, and noise performance of the Cherry-Hooper
amplifier with emitter-follower feedback are analyzed from a design perspective. A method …

A new structure for SiGe Hetero-junction Bipolar transistor (HBT) is designed and simulated
using Silvaco simulator. The considered extra terminal gives the ability to control the …

We review the emerging reliability issues associated with high-performance SiGe HBT
technologies which are being increasingly deployed in a wide variety of mixed-signal circuit …

This paper discusses and illustrates the key device design issues for SiGe BiCMOS HBTs
suitable for wireless power amplifier (PA) applications. Experimental results addressing …

The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit
performance for broadband and tuned millimeter-wave applications. Implementations of …

A 45-Gb/s BiCMOS decision circuit operating from a 2.5-V supply is reported. The full-rate
retiming flip-flop operates from the lowest supply voltage of any silicon-based flip-flop …

This article presents a 27.9–28.8-GHz voltage-controlled oscillator (VCO) in a 90-nm SiGe
BiCMOS process. The VCO consists of class-C active devices and a transformer tank. A …

The impact of the concurrent action of electrothermal and avalanche effects on the reduction
of the safe operating area is experimentally investigated for a wide number of single-, two …