Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Single-photon sources are one of the key components in quantum photonics applications.
These sources ideally emit a single photon at a time, are highly efficient, and could be …

The bottom-up fabrication of regular nanowire (NW) arrays on a masked substrate is
technologically relevant, but the growth dynamic is rather complex due to the superposition …

The growth of III–III–V axial heterostructures in nanowires via the vapor–liquid–solid method
is deemed to be unfavorable because of the high solubility of group III elements in the …

Selective-area epitaxy is highly successful in producing application-ready size-
homogeneous arrays of III–V nanowires without the need to use metal catalysts. Previous …

We present a new analytical approach for understanding and tuning the composition of
ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial …

Controlling the composition of ternary III-V and III-nitride nanomaterials such as vertical
nanowires, horizontal nanowires, nanosheets, and nanomembranes grown by different …

Growth and properties of the self‐catalyzed heterostructured GaP nanowires (NWs) with
GaP1− xAsx insertions in the form of nanodiscs (NDs) grown by means of molecular‐beam …

Semiconductor nanowires are considered as one of the most promising candidates for next-
generation devices due to their unique quasi-one-dimensional structures and novel physical …

III-V nanowire (NW) heterostructures are promising candidates for advanced silicon-
integrated optoelectronics and quantum light sources. The interfacial abruptness in axial NW …