Smooth and crack-free (0002) AlN thick films (∼ 30 μm) were epitaxially grown on trench-
patterned AlN/sapphire templates through epitaxial lateral overgrowth (ELO) using hydride …

Abstract Semi-polar (11 2‾ 2) AlN epilayers have been grown on (10 1‾ 0) m-plane sapphire
substrates with the help of dual moderate-temperature-grown (MTG) AlN interlayers by metal …

High-quality semipolar (11–22) AlN films with a thickness of 8.4 μm are grown on m-plane
sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The full widths at half …

Thin films of boron nitride in its sp 2-hybridized form (sp 2-BN) have potential uses in UV
devices and dielectrics. Here, we explore chemical vapor deposition (CVD) of sp 2-BN on …

We have investigated the effect of high-temperature nitridation and buffer layer on the semi-
polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy …

In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor
phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) …

Single-crystal semi-polar (112) AlN films are grown on 2-inch m-plane sapphire substrates
by high-temperature hydride vapor phase epitaxy (HVPE). The introduction of the sapphire …

We investigate the microstructures at the interface between the semipolar (103) AlN epilayer
and the m-plane (100) sapphire substrate using electron microscopy techniques. The …

摘要氮化铝(AlN) 晶体具有超宽禁带, 深紫外透明, 高热导率, 高声速以及高温稳定等优异特能,
成为当前半导体领域的关键前沿材料之一. 它是氮化镓(GaN) 基功率半导体器件和深紫外光电 …

In the article, using the example of growing aluminum nitride (AlN) on (110) orientation
silicon (Si) with a silicon carbide (SiC) buffer layer, a method for growing a new type of …