GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi-
junction solar cells due to the bandgap tunability in the 1.0–1.15 eV range and the possibility …

In this work, we demonstrate the beneficial effect of post-growth rapid thermal annealing
(RTA) on the performance of~ 1 eV GaAsSbN-based solar cells. Different configurations of …

As promising candidates for solar cell and photodetection applications in the range 1.0–1.16
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …

We report the performance of a 1eV GaNAsSb-based photovoltaic cell grown using a
molecular beam epitaxy system equipped with a radio frequency (RF) plasma-assisted …

We demonstrate type-II GaAsSb/GaAsN superlattices (SL) as a suitable structure to form the
lattice-matched 1.0–1.15 eV subcell that would allow the implementation of the optimum …

Photoreflectance spectroscopy is utilized to study the effect of dilute nitrogen and antimony
on the electronic band structure of as-grown GaAs 1-xy Sb x N y alloys, which are potential …

Type II emission optoelectronic devices using GaAsSb strain reduction layers (SRL) over
InAs quantum dots (QDs) have aroused great interest. Recent studies have demonstrated an …

GaNAsSb/GaAs pin photo¬ detectors with an intrinsic GaNAsSb photoabsorption layer
grown at 350C, 400C, 440C and 480C, have been prepared using radio-frequency nitrogen …

We report a photoconductive switch with GaNAsSb as active material for microwave
switching application. The GaNAsSb layer was grown by molecular beam epitaxy in …

We report on the fabrication of high-speed GaNAsSb photodetector for multigigabit
operation at 1.3 μ m wavelength. The 2 μ m thick bulk GaNAsSb photoabsorption layer …