Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …

GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …

Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages,
temperatures and frequencies with low energy losses, and are important for power and high …

The expansion of the electric vehicle market is driving the request for efficient and reliable
power electronic systems for electric energy conversion and processing. The efficiency, size …

Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistors (p-
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …

This letter demonstrates self-aligned-channel FinFETs based on a GaN-on-Si wafer. While
the self-aligned gate process helps to achieve shortest possible source-to-drain distance to …