The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

GaN-based micro-size light-emitting diode (μLED) have emerged as a promising light
sources for a wide range of applications in displays, visible light communication etc. In …

AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …

An atomically thick AlN layer is typically used as the strain compensation layer (SCL) for
InGaN-based-red light-emitting diodes (LEDs). However, its impacts beyond strain control …

AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum
confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) …

Abstract Commonly, the Al-rich AlGaN layer acts as electron blocking layer (EBL) to block
the overflow of electrons from the active region in conventional AlGaN deep-ultraviolet …

The fabrication of GaN light-emitting diodes (LEDs) with on-chip photodetectors (PDs) based
on flip-chip configuration is reported. The exposed sapphire plays a key role not only in light …

Aluminium (Al) composition is a critical parameter of performance for deep ultraviolet (DUV)
AlGaN devices. In multiple-quantum-wells (MQW) nanowire laser diode, quantum barriers …

InGaN-based micro light-emitting diodes (micro-LEDs) with 5, 10, and 13 nm quantum
barrier (QB) thickness were fabricated by metal-organic chemical vapor deposition …

Both the weak carrier confinement in InGaN/GaN multiple quantum wells (MQWs) and the
severe quantum-confined Stark effect in InGaN/AlGaN MQWs limit the improvement of …