Highly scaled GaN complementary technology on a silicon substrate
This article reports on the scaling of GaN complementary technology (CT) on a silicon
substrate to push its performance limits for circuit-level applications. The highly scaled self …
substrate to push its performance limits for circuit-level applications. The highly scaled self …
GaN memory operational at 300° C
The most commonly used memory cells, namely a 32-bit-bit read-only memory, a 1-bit 4-
transistor static random-access memory, D latch, and D flip-flop (DFF), were demonstrated …
transistor static random-access memory, D latch, and D flip-flop (DFF), were demonstrated …
Enhancement-mode GaN transistor technology for harsh environment operation
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
High temperature robustness of enhancement-mode p-GaN-gated AlGaN/GaN HEMT technology
This paper reports on the high temperature (HT) robustness of enhancement-mode (E-
mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an …
mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an …
Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET with High Breakdown Voltage and Ultra-Low Interface State Density
H Su, T Zhang, S Xu, H Tao, J Zhang… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this work, a novel normally-off p-channel AlGaN/GaN/AlGaN Metal-Semiconductor field
effect transistor (MESFET) with threshold voltage () of− 0.7 V is demonstrated. The state-of …
effect transistor (MESFET) with threshold voltage () of− 0.7 V is demonstrated. The state-of …
Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
J Zhou, HB Do, MM De Souza - ACS Applied Electronic Materials, 2023 - ACS Publications
The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a
normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on …
normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on …
High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated with PEALD-AlN Gate Interfacial Layer
This letter presents a meticulously designed gate structure featuring a SiNx/AlN staggered
gate stack on GaN-channel field-effect transistors (-FETs) to enhance the modulation …
gate stack on GaN-channel field-effect transistors (-FETs) to enhance the modulation …
p-GaN Platform for Next-Generation GaNComplementary Transistors and Circuits
Q Xie - 2024 - dspace.mit.edu
Gallium nitride (GaN) integrated circuits (ICs) are receiving increasing attention because
they offer compactness, reduced parasitics, and higher performance compared to discrete …
they offer compactness, reduced parasitics, and higher performance compared to discrete …
Polarization-Assisted Acceptor Ionization in E-Mode GaN p-FET on 650-V E-mode p-GaN Gate HEMT (EPH) Platform
T Li, M Zhang, J Yu, J Cui, J Yang, Y Wu… - … Devices and ICs …, 2024 - ieeexplore.ieee.org
There is a strong motivation to develop E-mode p-channel field-effect transistor (p-FET) on
the E-mode p-GaN gate HEMT (EPH) platform to enable complementary logic (CL) circuits …
the E-mode p-GaN gate HEMT (EPH) platform to enable complementary logic (CL) circuits …