Positive Bias Temperature Instability in SiC-Based Power MOSFETs
V Volosov, S Bevilacqua, L Anoldo, G Tosto, E Fontana… - Micromachines, 2024 - mdpi.com
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias
temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH …
temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH …