Abstract Bulk‐scale (2¯ ̄2 01)‐oriented monoclinic beta‐phase gallium oxide (β‐Ga2O3)
single crystals are brittle and fracture at low compressive strains. Here, it is reported that …

This study elucidates the dislocation responsible for the leakage current in a halide vapor
phase epitaxial (001) β-Ga 2 O 3 Schottky barrier diode. A high reverse leakage current of …

The influence of substrate orientation on homoepitaxial growth of beta-gallium oxide by
halide vapor phase epitaxy was investigated. Substrates were cut at various angles Δ b from …

We systematically analyzed the Al composition dependences of the structural properties of
(Al x Ga 1− x⁠) 2 O 3 thin films grown on β-Ga 2 O 3 (010) substrates. The crystal structure …

Dislocation responsible for leakage current in a halide vapor phase epitaxial (HVPE)(001) β-
Ga 2 O 3 Schottky barrier diode (SBD) was explored via ultrahigh-sensitive emission …

The effect of heteroepitaxial β-(Al x Ga 1− x) 2 O 3 film thickness and Al content on surface
morphology was characterized to experimentally determine the critical thickness limitations …

Using bright-field x-ray topography based on anomalous transmission (AT), we have
demonstrated the first large-area total-thickness imaging of dislocations in b-Ga2O3 at the …

Beta-phase gallium oxide (β-Ga2O3) bulk single crystals have received increasing attention
due to their fantastic performances and widespread use in power devices and solar-blind …

We performed Borrmann effect x-ray topography (XRT) to observe dislocations and other
structural defects in a thick β-Ga 2 O 3 (001) substrate. The Borrmann effect was realized by …

High crystal quality of vertical Bridgman (VB)-grown (001) β-Ga 2 O 3 single-crystal was
confirmed in comparison with edge-defined film-fed growth (EFG)-grown (001) β-Ga 2 O 3 …