Automated extraction of single H atoms with STM: tip state dependency

M Møller, SP Jarvis, L Guérinet, P Sharp… - …, 2017 - iopscience.iop.org
The atomistic structure of the tip apex plays a crucial role in performing reliable atomic-scale
surface and adsorbate manipulation using scanning probe techniques. We have developed …

Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs

G Mahieu, B Grandidier, D Deresmes, JP Nys… - Physical review …, 2005 - APS
We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in
GaAs using cross-sectional scanning tunnelling microscopy (STM) and spectroscopy at low …

Extended Hückel theory for band structure, chemistry, and transport. II. Silicon

D Kienle, KH Bevan, GC Liang, L Siddiqui… - Journal of applied …, 2006 - pubs.aip.org
In this second paper, we develop transferable semiempirical extended Hückel theoretical
(EHT) parameters for the electronic structure of another technologically important material …

Reflectance-anisotropy spectroscopy and surface differential reflectance spectra at the Si (100) surface: Combined experimental and theoretical study

M Palummo, N Witkowski, O Pluchery, R Del Sole… - Physical Review B …, 2009 - APS
We present reflectance-anisotropy spectroscopy (RAS) and surface differential reflectivity
(SDR) experiments carried out on well-characterized single-domain nominal silicon (100) …

Atomic scale fabrication of dangling bond structures on hydrogen passivated Si (0 0 1) wafers processed and nanopackaged in a clean room environment

M Kolmer, S Godlewski, R Zuzak, M Wojtaszek… - Applied Surface …, 2014 - Elsevier
Specific surfaces allowing the ultra-high vacuum (UHV) creation of electronic interconnects
and atomic nanostructures are required for the successful development of novel nanoscale …

Electronic properties of the -doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K

A Bellec, D Riedel, G Dujardin, O Boudrioua… - Physical Review B …, 2009 - APS
We present a comparative study of the electronic properties of the clean Si (100) and the
hydrogenated Si (100): H surfaces performed with a low-temperature (5 K) scanning …

Surface-Isomerization Dynamics of trans-Stilbene Molecules Adsorbed on Si(100)-2×1

D Riedel, M Cranney, M Martin, R Guillory… - Journal of the …, 2009 - ACS Publications
Photoinduced trans− cis isomerization studies of stilbene molecules in the gas phase have
led to a precise understanding of the corresponding molecular dynamics. Yet, when such …

Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

T Xu, JP Nys, B Grandidier, D Stiévenard… - Journal of Vacuum …, 2008 - pubs.aip.org
This article reports on the growth of Au islands on the Si (111) surface as a function of the Au
evaporation rate and the temperature of the surface in ultrahigh vacuum. By controlling the …

Scanning tunneling microscopy and spectroscopy of reconstructed surfaces

M Dubois, L Perdigao, C Delerue, G Allan… - Physical Review B …, 2005 - APS
We combine theory and experiments to study bias-dependent scanning tunneling
microscopy (STM) images of the different reconstructions of Si (100) surfaces. Coupling with …

Probe effect in scanning tunneling microscopy on low-temperature phases

S Yoshida, T Kimura, O Takeuchi, K Hata… - Physical Review B …, 2004 - APS
The probe effect, the effect of parameters in scanning tunneling microscopy (STM)
measurement, on the Si (100) surface with two competing phases in delicate balance, was …