GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

An overview is presented of progress in GaN electronic devices for high‐power, high‐
temperature applications. The wide bandgaps of the nitride materials, their excellent …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

The optical and structural properties of high-quality single-crystal epitaxial MgZnO films
deposited by pulsed-laser deposition were studied. In films with up to∼ 36 at.% Mg …

The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the
electrical effects of high density Ar or H 2 plasma exposure. The near surface of the p-GaN …

The ability to tailor compound semiconductors and to integrate them onto foreign substrates
can lead to superior or novel functionalities with a potential impact on various areas in …

GaN: Mg layers grown by plasma-assisted molecular-beam epitaxy at 650° C are
investigated. Secondary-ion-mass-spectroscopy measurements reveal uniform Mg doping …

Plasma-induced etch damage can degrade the electrical and optical performance of III–V
nitride electronic and photonic devices. We have investigated the etch-induced damage of …

We report on the interface properties of thermally oxidized n-GaN metal–oxide–
semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga 2 O 3 was …

Diffusion of the p-type dopant Mg in GaN and Al x Ga 1− x N which is accompanied by
segregation and affected by transient effects in metal-organic vapor-phase epitaxy reactors …