Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have
matured dramatically over the last few years, and many hundreds of thousands of devices …

Modern mobile communication signals require power amplifiers able to maintain very high
efficiency in a wide range of output power levels, which is a major issue for classical power …

A symmetrical Doherty power amplifier (PA) with an extended efficiency range is proposed.
This paper proves the existence of a class of symmetrical Doherty PAs having efficiency …

In modern wireless communication systems, it is very important to realize simultaneously
high-efficiency and linear operation of power amplifiers. This paper-overview describes the …

A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented.
Simple, but accurate design equations for the output power combiner of the amplifier are …

This paper presents a wideband 2× 13-bit in-phase/quadrature-phase (I/Q) RF digital-to-
analog converter-based all-digital modulator realized in 65-nm CMOS. The isolation …

A new Doherty amplifier configuration with an intrinsically broadband characteristic is
presented based on the synthesis of key ideas derived from the analyses of the load …

This article presents a millimeter-wave (mmWave) three-way Doherty output network and its
silicon implementation at 38 GHz for 5G new radio (NR) orthogonal frequency-division …

This comprehensive, hands-on review of the most up-to-date techniques in RF and
microwave measurement combines microwave circuit theory and metrology, in-depth …

An analytical load—pull-based design methodology for three-stage Doherty power
amplifiers (PAs) is presented and demonstrated. A compact output combiner network …