Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices
The co-integration of logic switches and neuromorphic functions could be used to create
new computing architectures with low power consumption and novel functionalities. Two …
new computing architectures with low power consumption and novel functionalities. Two …
Aptamer‐functionalized field‐effect transistor biosensors for disease diagnosis and environmental monitoring
J Wang, D Chen, W Huang, N Yang, Q Yuan… - …, 2023 - Wiley Online Library
Nano‐biosensors that are composed of recognition molecules and nanomaterials have
been extensively utilized in disease diagnosis, health management, and environmental …
been extensively utilized in disease diagnosis, health management, and environmental …
Robust approach towards wearable power efficient transistors with low subthreshold swing
For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …
A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping
Reconfigurable field-effect transistors (FETs) combine unipolar n-and p-type characteristics
in a single programmable device and could be used to reduce the complexity of electronic …
in a single programmable device and could be used to reduce the complexity of electronic …
A three-terminal light emitting and detecting diode
Two-terminal devices are building blocks for modern electronic systems. However, the
typical two-terminal architecture can limit functionality and performance. Here we report a …
typical two-terminal architecture can limit functionality and performance. Here we report a …
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
In-memory computing can be used to overcome the von Neumann bottleneck—the need to
shuffle data between separate memory and computational units—and help improve …
shuffle data between separate memory and computational units—and help improve …
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Reconfigurable transistors are an emerging device technology adding new functionalities
while lowering the circuit architecture complexity. However, most investigations focus on …
while lowering the circuit architecture complexity. However, most investigations focus on …
Vertical GeSn nanowire MOSFETs for CMOS beyond silicon
The continued downscaling of silicon CMOS technology presents challenges for achieving
the required low power consumption. While high mobility channel materials hold promise for …
the required low power consumption. While high mobility channel materials hold promise for …
High drain field impact ionization transistors as ideal switches
B Yuan, Z Chen, Y Chen, C Tang, W Chen… - Nature …, 2024 - nature.com
Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec− 1
subthreshold swing. However, traditionally, impact ionization in silicon devices requires a …
subthreshold swing. However, traditionally, impact ionization in silicon devices requires a …
Sensing single domains and individual defects in scaled ferroelectrics
Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and
neuromorphic computing; however, for advanced applications, single domain dynamics and …
neuromorphic computing; however, for advanced applications, single domain dynamics and …