Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

S Kamaei, X Liu, A Saeidi, Y Wei, C Gastaldi… - Nature …, 2023 - nature.com
The co-integration of logic switches and neuromorphic functions could be used to create
new computing architectures with low power consumption and novel functionalities. Two …

Aptamer‐functionalized field‐effect transistor biosensors for disease diagnosis and environmental monitoring

J Wang, D Chen, W Huang, N Yang, Q Yuan… - …, 2023 - Wiley Online Library
Nano‐biosensors that are composed of recognition molecules and nanomaterials have
been extensively utilized in disease diagnosis, health management, and environmental …

Robust approach towards wearable power efficient transistors with low subthreshold swing

E Elahi, M Suleman, S Nisar, PR Sharma… - Materials Today …, 2023 - Elsevier
For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

MY Tsai, CT Huang, CY Lin, MP Lee, FS Yang, M Li… - Nature …, 2023 - nature.com
Reconfigurable field-effect transistors (FETs) combine unipolar n-and p-type characteristics
in a single programmable device and could be used to reduce the complexity of electronic …

A three-terminal light emitting and detecting diode

MH Memon, H Yu, Y Luo, Y Kang, W Chen, D Li… - Nature …, 2024 - nature.com
Two-terminal devices are building blocks for modern electronic systems. However, the
typical two-terminal architecture can limit functionality and performance. Here we report a …

High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon

MS Ram, KM Persson, A Irish, A Jönsson, R Timm… - Nature …, 2021 - nature.com
In-memory computing can be used to overcome the von Neumann bottleneck—the need to
shuffle data between separate memory and computational units—and help improve …

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Z Zhu, AEO Persson, LE Wernersson - Nature Communications, 2023 - nature.com
Reconfigurable transistors are an emerging device technology adding new functionalities
while lowering the circuit architecture complexity. However, most investigations focus on …

Vertical GeSn nanowire MOSFETs for CMOS beyond silicon

M Liu, Y Junk, Y Han, D Yang, JH Bae… - Communications …, 2023 - nature.com
The continued downscaling of silicon CMOS technology presents challenges for achieving
the required low power consumption. While high mobility channel materials hold promise for …

High drain field impact ionization transistors as ideal switches

B Yuan, Z Chen, Y Chen, C Tang, W Chen… - Nature …, 2024 - nature.com
Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec− 1
subthreshold swing. However, traditionally, impact ionization in silicon devices requires a …

Sensing single domains and individual defects in scaled ferroelectrics

Z Zhu, AEO Persson, LE Wernersson - Science Advances, 2023 - science.org
Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and
neuromorphic computing; however, for advanced applications, single domain dynamics and …