Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …

Many correlated systems feature an insulator-to-metal transition that can be triggered by an
electric field. Although it is known that metallization takes place through filament formation …

The elementary basis of intelligence in organisms with a central nervous system includes
neurons and synapses and their complex interconnections forming neural circuits. In non …

The interdependences of different phase transitions in Mott materials are fundamental to the
understanding of the mechanisms behind them. One of the most important relations is …

Controlling the electronic properties of oxides that feature a metal–insulator transition (MIT)
is a key requirement for developing a new class of electronics often referred to as …

We present a study of the synthesis of epitaxial V 2 O 3 films on c-plane Al 2 O 3 substrates
by reactive dc-magnetron sputtering. The results reveal a temperature window, at …

Strain engineering is a well‐known method often used to tune material properties in thin
films. The most studied sources of strain are lattice mismatch and differential thermal …

The insulator-to-metal transition in Mott insulators is the key mechanism for most of the
electronic devices belonging to the Mottronics family. Intense research efforts are currently …

The metal‐insulator phase transitions in V2O3 are considered archetypal manifestations of
Mott physics. Despite decades of research, the effects of doping, pressure, and anisotropic …

Using the extensively studied V2O3 as a prototype system, we investigate the role of
percolation in metal-insulator transition (MIT). We apply scanning microwave impedance …