New insights on Ni-Si system for microelectronics applications

RK Pandey, G Maity, S Pathak, P Kalita… - Microelectronic …, 2022 - Elsevier
Metal silicides and their nanostructures have been found to be suitable candidates for
device manufacturing in contemporary microelectronics industries to reduce contact …

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

AY Hou, YH Ting, KL Tai, CY Huang, KC Lu… - Applied Surface …, 2021 - Elsevier
Nickel silicide has many advantages, such as low resistivity and low formation temperature;
therefore, it has been widely used in the fields of solar cells, transistors and complementary …

High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection

J Yu, X Zhao, Y Miao, J Su, Z Kong, H Li… - ACS Applied Nano …, 2024 - ACS Publications
High-responsivity and low dark current resonant-cavity-enhanced (RCE) Ge PIN
photodiodes with a monolayer graphene absorber were demonstrated on a 200 mm …

Selective conversion of furfural to cyclopentanone over the N-doped CuNi alloy carbon materials derived from porphyrin-based bimetallic metal-organic frameworks

Z Cai, Z Zhang, Y Qi, C Zheng, X Wei, Z Cheng… - Fuel, 2024 - Elsevier
The creation of CuNi alloys and Pyrrolic-N-Ni bonding facilitated efficient hydrogenation and
acid-catalyzed steps of biomass derivatives in aqueous solvents. The carbon materials …

First-principles study on the lattice vibration, anisotropy, tensile strength and electronic properties of CuxHfySiz intermetallics

C Li, X Zhang, F Wang - Chemical Physics Letters, 2023 - Elsevier
The stability, lattice vibrations, anisotropy in elasticity and stress–strain behavior of the Cu x
Hf y Si z ternary silicide were calculated by first-principles methods. According to the …

Transformation and Control of Crystal Structures on Electronic Thin Films

YW Chang, YC Chen, CY Chang… - Crystal Growth & …, 2024 - ACS Publications
The deposition of Ni film on the Si substrate is important due to its broad applications in
electronics, especially at the nanoscale. In this study, we applied molecular dynamics …

Achieving Ultrafast Growth of Large-Scale Single-Phase Ni Silicide by Controlling the Bilayer Thickness of a Reactive Multilayer

YW Chang, YH Sun, YC Chen… - The Journal of Physical …, 2024 - ACS Publications
A reactive multilayer is a nanoscale interlaced material that is able to release stored energy
with proper ignition sources. In this study, the equiatomic Ni/Si RMLs with bilayer …

Mechanical and Electrical Properties of Ni-Ag Metallized TOPCon Silicon Solar Cells Structured by Green Picosecond Laser

L Wang, X Huang, J Lv, J Wang, M Cao… - Journal of Electronic …, 2023 - Springer
Screen printing is the main metallization technology in the field of solar cells. However, grids
prepared by this process still have problems such as high contact resistance and poor …

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Z Wang, H Liu, D Chen, Z Wang, K Wu, G Cheng… - Materials, 2024 - mdpi.com
Due to the lower cost compared to screen-printed silver contacts, the Ni/Cu/Ag contacts
formed by plating have been continuously studied as a potential metallization technology for …

Control of Large‐Scale Single‐Phase Ni Silicide Formation from Reactive Multilayers

YW Chang, KH Lam, C Chang, HR Chen… - Advanced …, 2022 - Wiley Online Library
The Ni/Si reactive multilayer (RML) is full of application potentials including reactive joining,
igniters, and power sources. Here, the Ni/Si RMLs with atomic ratios of Ni and Si (2: 1, 1: 1 …