Near-traveling-wave semiconductor laser amplifiers for amplification and detection of optical
signals are discussed. Measurements of gain, responsivity, and bandwidth are presented …

A novel and accurate technique for measuring the internal losses of semiconductor lasers is
demonstrated. The technique is based on two measurements: the injection current required …

We report a tunable receiver based on a MQW-DBR laser biased just below threshold. The
device simultaneously integrates the functions of a tunable filter, optical amplifier …

Several commercial GaAlAs and InGaAsP injection lasers have been investigated with
respect to their photodetection properties. The responsivity of the laser diode detectors is in …

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers
biased from below to above threshold has been investigated both theoretically and …

GaAs/AlGaAs lasers grown by a single-step MBE on grooved substrates have been used to
investigate the scaling of lasers for very low threshold current. By tuning the facet reflectivity …

In this letter we report the first femtosecond measurements of gain and loss dynamics in
InGaAsP diode laser amplifiers using optically induced changes in diode junction voltage …

The wide-band electrical noise characteristics of 0.8-, 1.3-, and 1.5-μm laser diodes have
been studied theoretically and for the first time also experimentally. The electrical noise is …

Multifunctional properties of an InGaAsP semiconductor laser amplifier have been
evaluated. A bit error rate of 10/sup-9/at 100 Mb/s was obtained using the amplifier as a …

A pigtailed transceiver module which exhibits a record responsivity of 0.5 A/W is described.
A single laser chip of Fabry–Perot type V-on-U-groove (VUG) laser is packed in a butterfly …