3D bioprinted organ‐on‐chips

S Rahmani Dabbagh, M Rezapour Sarabi… - …, 2023 - Wiley Online Library
Abstract Organ‐on‐a‐chip (OOC) platforms recapitulate human in vivo‐like conditions more
realistically compared to many animal models and conventional two‐dimensional cell …

Photopolymer materials and processes for advanced technologies

JV Crivello, E Reichmanis - Chemistry of Materials, 2014 - ACS Publications
Photopolymers broadly comprise monomers, oligomers, polymers, or mixtures of the
aforementioned materials that upon exposure to light undergo photochemical reactions that …

Alloy scattering of phonons

R Gurunathan, R Hanus, GJ Snyder - Materials Horizons, 2020 - pubs.rsc.org
Solid-solution alloy scattering of phonons is a demonstrated mechanism to reduce the lattice
thermal conductivity. The analytical model of Klemens works well both as a predictive tool for …

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

R Strenaer, Y Guhel, C Gaquière… - physica status solidi …, 2024 - Wiley Online Library
The aim of this article is to show that it is possible to rapidly estimate the activation energies
of electron traps in AlInN/GaN transistors operating at room temperature by combining …

The phototransistor action of a reverse-biased Au/CaF2 [3–7 ML]/n-Si (1 1 1) structure

MI Vexler, YY Illarionov, SM Suturin… - Semiconductor …, 2010 - iopscience.iop.org
Metal–ultra-thin insulator–semiconductor (MIS) tunnel structures with a high-quality ultra-thin
epitaxial fluoride layer have been fabricated on n-Si wafers. Under the reverse bias, these …

[PDF][PDF] Optical testing of submicron-technology MOSFETs and bipolar transistors

D Pogany, C Fürböck, N Seliger, P Habas, E Gornik… - ESSDERC, 1997 - researchgate.net
A noninvasive infrared laser interferometric technique is used to analyse 0.1 µm-test-
technology NMOSFETs and 0.5 µm-technology bipolar junction transistors and PMOSFETs …

Terahertz emission by nanoporous GaP (111) B

A Atrashchenko, A Arlauskas… - … and Terahertz waves …, 2015 - ieeexplore.ieee.org
We have studied the emission of terahertz radiation from nanoporous semiconductor
matrices of GaP excited by the femtosecond laser pulses. We observe 3-4 orders of …

Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs

J Kuzmik, G Pozzovivo, B Basnar… - The Eighth …, 2010 - ieeexplore.ieee.org
We correlate dc maximal drain current I DSmax, pulsed output characteristics, rf small-signal
and breakdown performance of normally-off InAlN/GaN HEMTs with varied gate-to-drain …