The corrosion behavior of the FeCrAl coating with different Cr and Al contents before and
after Au-ions irradiation was investigated in static LBE. The grain of the irradiated coating …

We investigated the response of wurzite GaN thin films to energetic ion irradiation. Both swift
heavy ions (92 MeV Xe 23+, 23 MeV I 6+) and highly charged ions (100 keV Xe 40+) were …

Abstract Gallium Nitride (GaN) epilayer grown by Hydride Vapor-Phase Epitaxy was
irradiated with 100 MeV O 7+ light ions for different fluences. The X-ray diffraction results …

In this work, GaN epilayers, grown on (0 0 0 1) sapphire substrate, were studied under swift
heavy ion irradiation with a broad variety of projectiles at different energies. Several …

The structural modifications and the evolution of mechanical behavior of gallium nitride
(GaN) thin films irradiated by 92 MeV 129 Xe 23+ at different fluences have been …

Metal-organic chemical vapor deposition (MOCVD) grown n-type Gallium nitride (GaN) has
been irradiated with 100MeV Ni9+ ions at room temperature. Atomic force microscopy (AFM) …

We report the formation of nanoclusters on the surface of gallium nitride (GaN) epilayers due
to irradiation with 70 MeV Si ions with the fluences of 1× 10 12 ions/cm 2 at the liquid …

We have investigated the micro Raman spectra of pristine and 100MeV swift heavy ions
namely oxygen and silver ions, irradiated at fluences of 1× 1012 and 1× 1013ionscm− 2 on …

Micro-structural characteristics and electrical properties of an n-type GaN epilayer on Al2O3
irradiated by 290-MeV 238U32+ ions to various fluences were investigated using atomic …

The irradiation influences the properties of GaN. We studied the irradiation of n-type, p-type,
and i-type GaN with 2.896 GeV Ta ions, with experimental irradiation fluence of 3× 10 8, 3× …