Phase-change materials are highly promising for next-generation nonvolatile data storage
technology. The pronounced effects of C doping on structural and electrical phase-change …

We investigated the structural, electronic and vibrational properties of amorphous and cubic
Ge 2 Sb 2 Te 5 doped with N at 4.2 at.% by means of large scale ab initio simulations …

The pronounced effects of dopants such as Si, N, and O atoms, on material properties of Ge
2 Sb 2 Te 5 are investigated at the atomic level using ab initio calculations. In the crystalline …

The dependence of the electrical properties of Ge 2 Sb 2 Te 5 on nitrogen doping
concentration was investigated, which was explained based on the trends in the materials …

Nitrogen doping in chalcogenide materials represents a promising way for the improvement
of material properties. Indeed, N doping in GeSbTe phase-change alloys have …

The influence of Si and N in Ge 2 Sb 2 Te 5 (space group) on structure and phase stability
thereof was studied experimentally by thin film growth and characterization as well as …

The crystallization behaviors of and nitrogen-doped films, deposited by dc magnetron
sputtering, were investigated using the in situ resistance measurement, X-ray diffractometry …

The phase-change behavior and microstructure changes of N-doped Ge 3 Sb 2 Te 5 [N-GST
(3/2/5)] and Ge 2 Sb 2 Te 5 [GST (2/2/5)] films during the phase transition from an …

The thermal and electrical-property changes of 2.02 at.% nitrogen-doped Ge-rich
Ge3Sb2Te5 (NGST) were investigated. The crystallization temperature was 180° C. The …

Amorphous Ge 2 Sb 2 Te 5 (a-GST) films were deposited by ion beam sputtering deposition.
Extended x-ray absorption fine structure (EXAFS) data confirmed the existence of the Ge–Ge …