The effects of NH 3 flow, group III flux, and substrate growth temperature on indium
incorporation and surface morphology have been investigated for bulk InGaN films grown by …

In this work, the effect of size and wetting layer on subband electronic envelop functions,
eigenenergies, linear and nonlinear absorption coefficients and refractive indices of a dome …

Discussion of band gap behavior based on first principles calculations of electronic band
structures for various short period nitride superlattices is presented. Binary superlattices, as …

This article describes the growth and device characteristics of vertically aligned high-quality
uniaxial p-GaN/In x Ga1–x N/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) …

GaN lasers with green emission wavelength at λ= 510 nm have been fabricated using novel
nano-porous GaN cladding under pulsed electrical injection. The low slope efficiency of 0.13 …

We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on
nonpolar GaN substrates, using a KOH/K 2 S 2 O 8 solution and illuminated by a Xe arc …

As for high-power laser diode (LD) driven lighting, Y3Al5O12: Ce3+ phosphor ceramics
(YAG: Ce-CPs) are regarded as ideal converters to produce white light. Due to the lack of …

(57) ABSTRACT A white light Source employing a III-nitride based laser diode pumping one
or more phosphors. The III-nitride laser diode emits light in a first wavelength range that is …

ABSTRACT III-nitrides based light-emitting diodes and laser diodes (LDs) have shown great
success as solid-state lighting sources, but the development of common c-plane (0001) …

The differential gain and coherent output characteristics of blue-emitting In 0.18 Ga 0.82
N/GaN quantum dot ridge waveguide lasers have been measured. The laser …