Spinel ferrites for resistive random access memory applications

K Gayakvad, K Somdatta, V Mathe, T Dongale… - Emergent …, 2024 - Springer
Cutting edge science and technology needs high quality data storage devices for their
applications in artificial intelligence and digital industries. Resistive random access memory …

High‐Performance Memristors Based on Few‐Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing

Z Weng, H Zheng, W Lei, H Jiang… - Advanced Functional …, 2024 - Wiley Online Library
While transition‐metal thiophosphate (MPX3) materials have been a subject of extensive
research in recent years, experimental studies on MPX3‐based memristors are still in their …

Bipolar resistive switching behavior of bilayer β-Ga2O3/WO3 thin film memristor device

MW Alam, A Jamir, B Longkumer, B Souayeh… - Journal of Alloys and …, 2025 - Elsevier
This article investigates the bipolar resistive switching behavior of bilayer Au/β-Ga 2 O 3/WO
3 thin film (TF)/Ag heterostructure memristor device deposited using an electron beam …

Enhanced resistive switching performance and structural evolution of NiO/Nb2O5− x bilayer memristive device

CH Wang, HY Lo, CW Huang, JY Chen… - Journal of Alloys and …, 2024 - Elsevier
The development of bilayer models is crucial for enhancing the performance and enabling
multifunctionality of next-generation resistive random-access memory (RRAM). However …

Physical implementation of cobalt ferrite memristor in Chua's circuit for chaotic encryption

KS Seetala, W Clower, M Hartmann… - Microelectronic …, 2024 - Elsevier
Memory resistor, or memristor, has been realized as a discrete electronic device and has a
perspective application in the field of cryptography. The physical implementation of the …