Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

We present a review of the current status of research into new semiconductor materials for
use as particle tracking detectors in very high radiation environments. This work is carried …

Solution-grown organic semiconducting single crystals are robust and easy to handle
materials that can reliably detect X-rays in the direct approach, operating at room …

In this communication, we report on the synthesis of few atomic-layer boron nitride
nanosheets (BNNSs) and their application for deep ultraviolet photo-detection. Synthesis of …

Particle detectors were made using semiconductor epitaxial 4H–SiC as the detection
medium. The investigated detectors are formed by Schottky contact (Au) on the epitaxial …

The relatively high value of the energy required to produce an electron-hole pair in silicon
carbide, SiC, by a minimum ionizing particle (MIP) against the value for Si, imposes severe …

Сделано заключение, что прогресс последних лет в получении совершенных пленок
SiC (разностная концентрация примесей (3· 1014− 3· 1015) см− 3, плотность полых …

Introduction: This paper deals with the class of versatile semiconducting materials called
perovskites, which have been deposited for the first time on flexible substrates and then …

In this work we analyzed the radiation hardness of SiC p/sup+/n diodes used as minimum
ionizing particle (MIP) detectors after very high 1 MeV neutron fluences. The diode structure …

Available results of studying the radiation resistance of SiC and developing the nuclear-
radiation detectors based on SiC are analyzed. The data on the ionization energies, capture …