Impact of capacitance and linearity on the reliability of InGaN notch based dual channel GaN MOSHEMTs for precision biosensing
In this proposed work, the effect of capacitance and linearity were extensively analyzed on
the performance of dual-channel (DC) AlGaN/GaN MOSHEMTs for improved sensitivity and …
the performance of dual-channel (DC) AlGaN/GaN MOSHEMTs for improved sensitivity and …
Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing
GS Mishra, N Mohankumar… - Engineering Research …, 2024 - iopscience.iop.org
This paper focuses on the impact of gate-engineered dielectric-modulated GaN MOSHEMT
with InGaN notch on sensitivity enhancement for label-free biosensing. The novelty of this …
with InGaN notch on sensitivity enhancement for label-free biosensing. The novelty of this …
CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing
In this paper, we have demonstrated the effect of InGaN notch on device reliability, including
CV analysis and linearity analysis of an AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
CV analysis and linearity analysis of an AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …