Instabilities in silicon power devices: A review of failure mechanisms in modern power devices
F Iannuzzo, C Abbate, G Busatto - IEEE Industrial Electronics …, 2014 - ieeexplore.ieee.org
In the last 15 years, the global demand for power saving, efficiency, and weight, size, and
cost reduction in both the consumer and the industrial fields have strongly pushed the …
cost reduction in both the consumer and the industrial fields have strongly pushed the …
Layout role in failure physics of IGBTs under overloading clamped inductive turnoff
X Perpina, I Cortes, J Urresti-Ibanez… - … on Electron Devices, 2012 - ieeexplore.ieee.org
The clamped inductive turnoff failure of nonpunchthrough insulated-gate bipolar transistors
(IGBTs) is investigated under overcurrent and overtemperature events. First, their electrical …
(IGBTs) is investigated under overcurrent and overtemperature events. First, their electrical …
LPT (II)-CSTBT™(III) for High Voltage application with ultra robust turn-off capability utilizing novel edge termination design
Z Chen, K Nakamura… - 2012 24th International …, 2012 - ieeexplore.ieee.org
In this paper, the phenomena of current crowding and impact ionization in edge termination
of High-Voltage (HV) LPT (II)-CSTBT™(III) is investigated. It is discovered for the first time …
of High-Voltage (HV) LPT (II)-CSTBT™(III) is investigated. It is discovered for the first time …
Non-simultaneous triggering induced failure of CS-MCT under repetitive high-current pulse condition
This work demonstrates the failure mechanism of the cathode-short MOS controlled thyristor
(CS-MCT) under repetitive high-current pulse condition. It is found that the hot spot and burn …
(CS-MCT) under repetitive high-current pulse condition. It is found that the hot spot and burn …
Unclamped repetitive stress on 1200 V normally-off SiC JFETs
C Abbate, G Busatto, F Iannuzzo - Microelectronics Reliability, 2012 - Elsevier
An experimental characterization of new-generation normally-off vertical channel 1200V SiC
JFETs under unclamped repetitive stress (URS) is presented. The drain and gate leakage …
JFETs under unclamped repetitive stress (URS) is presented. The drain and gate leakage …
高压IGBT 芯片开关过程栅分布效应仿真研究
孙琬茹， 王耀华， 刘江， 高明超， 李立， 李翠， 聂瑞芬… - 机车电传动, 2021 - edl.csrzic.com
高压IGBT 在导通或关断时是先从栅焊盘处获得驱动信号, 然后再依靠多晶硅层通向芯片的各个
区域. 由于多晶硅层形成的栅分布电阻效应使得芯片内元胞对栅驱动信号的反应时间不同 …
区域. 由于多晶硅层形成的栅分布电阻效应使得芯片内元胞对栅驱动信号的反应时间不同 …
Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling
During clamped inductive turn-off, the electro-thermal mismatch introduced by the layout of
NPT-IGBT devices could significantly enhance the risk of failure, thus reducing the lifetime of …
NPT-IGBT devices could significantly enhance the risk of failure, thus reducing the lifetime of …
Clamped inductive turn-off failure in high-voltage NPT-IGBTs under overloading conditions
X Perpiñà, I Cortés, J Urresti-Ibañez… - … Devices and ICs, 2012 - ieeexplore.ieee.org
The clamped inductive turn-off failure of NPT-IGBTs is investigated under overloading
events. First, their signatures are determined. Second, physical TCAD simulations are …
events. First, their signatures are determined. Second, physical TCAD simulations are …
Improved turn-off capability of IGBT with LIHT structure
Y Wu, Z Li, X Cui, Z Li, X Zeng, W Gao… - 2017 IEEE 24th …, 2017 - ieeexplore.ieee.org
LIHT (Lack Injection of Hole Termination) structure is proposed and studied. Compared with
conventional termination structure, the novel structure features a partial N-doped anode in …
conventional termination structure, the novel structure features a partial N-doped anode in …
[PDF][PDF] DESIGN AND VERIFICATION OF IGTBS RUGGED IN FORWARD AND REVERSE CONDITIONS
L Maresca - 2013 - core.ac.uk
The optimization and control of the energy is one of the major issue in the modern society
since the environmental concerns are becoming the more and more of crucial relevance …
since the environmental concerns are becoming the more and more of crucial relevance …