Electronic and optical properties of Al2O3/SiO2 thin films grown on Si substrate
D Tahir, HL Kwon, HC Shin, SK Oh… - Journal of Physics D …, 2010 - iopscience.iop.org
The electronic and optical properties of Al 2 O 3/SiO 2 dielectric thin films grown on Si (1 0 0)
by the atomic layer deposition method were studied by means of x-ray photoelectron …
by the atomic layer deposition method were studied by means of x-ray photoelectron …
A reverse Monte Carlo method for deriving optical constants of solids from reflection electron energy-loss spectroscopy spectra
A reverse Monte Carlo (RMC) method is developed to obtain the energy loss function (ELF)
and optical constants from a measured reflection electron energy-loss spectroscopy …
and optical constants from a measured reflection electron energy-loss spectroscopy …
Dispersion force for materials relevant for micro-and nanodevices fabrication
The dispersion (van der Waals and Casimir) force between two semi-spaces is calculated
using Lifshitz theory for different materials relevant for micro-and nanodevices fabrication …
using Lifshitz theory for different materials relevant for micro-and nanodevices fabrication …
Measurement of optical constants of Si and SiO2 from reflection electron energy loss spectra using factor analysis method
H Jin, H Shinotsuka, H Yoshikawa, H Iwai… - Journal of applied …, 2010 - pubs.aip.org
The energy loss functions (ELFs) and optical constants of Si and SiO 2 were obtained from
quantitative analysis of reflection electron energy loss spectroscopy (REELS) by a new …
quantitative analysis of reflection electron energy loss spectroscopy (REELS) by a new …
Electronic and optical properties of La‐aluminate dielectric thin films on Si (100)
D Tahir, EH Choi, YJ Cho, SK Oh… - Surface and …, 2010 - Wiley Online Library
Electronic and optical properties of (La2O3) x (Al2O3) 1− x thin films grown on Si (100) by
the atomic layer deposition method were studied by means of reflection electron energy loss …
the atomic layer deposition method were studied by means of reflection electron energy loss …
Three-dimensional electron microscopy of individual nanoparticles
K Jarausch, DN Leonard - Journal of electron microscopy, 2009 - academic.oup.com
The characterization of nanomaterials with complex three-dimensional (3D) geometries is
required to further research and enable the continuing development of nanotechnology. In …
required to further research and enable the continuing development of nanotechnology. In …
[HTML][HTML] Optical parameters of atomically heterogeneous systems created by plasma based low energy ion beams: Wavelength dependence and effective medium …
KP Singh, S Bhattacharjee - Frontiers in Physics, 2021 - frontiersin.org
The article presents the irradiation effects of low energy (∼ 0.5 keV) inert gaseous Argon ion
beams on optical constants [real (n) and imaginary (k) parts of the refractive index], dielectric …
beams on optical constants [real (n) and imaginary (k) parts of the refractive index], dielectric …
Microstructure, Electrical and Optical Characterization of Zn0-NiO-SiO2 Nanocomposite Synthesized by Sol-Gel Technique.
CA Canbay, A Aydogdu - Turkish Journal of Science & …, 2009 - search.ebscohost.com
Abstract The ZnO-NiO-SiO2 nanocomposites were prepared using transition metal oxides by
sol-gel method. The surface morphology of the prepared samples was investigated by …
sol-gel method. The surface morphology of the prepared samples was investigated by …
Electronic structure of ultrathin Si oxynitrides
H Jin, SK Oh, HJ Kang - … An International Journal devoted to the …, 2006 - Wiley Online Library
We have investigated the chemical states and the band gap of ultrathin Si oxynitrides on Si
(100) by X‐ray photoemission spectroscopy (XPS) and reflection electron energy loss …
(100) by X‐ray photoemission spectroscopy (XPS) and reflection electron energy loss …
Electronic and Optical Properties of Aluminum oxide before and after surface reduction by Ar+ bombardment
D Tahir, HJ Kang, S Tougaard - Atom Indonesia, 2014 - atomindonesia.brin.go.id
The electronic and optical properties of a-Al 2 O 3 after induced by 3-keV Ar+ sputtering
have been studied quantitatively by use of reflection electron energy loss spectroscopy …
have been studied quantitatively by use of reflection electron energy loss spectroscopy …