Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

Density functional theory calculations (based on GGA+U approach) are used to investigate
the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude …

We investigate the impact of isovalent (in particular lead (Pb)) doping on the production and
thermal stability of the vacancy-related (VO) and the interstitial-related (C i O i and C i C s) …

The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the
realization of ultrahigh doped regions in miniaturized germanium (Ge) based devices. In this …

The study of the properties of defects in silicon forming under irradiation condition has been
carried out for many years, however, many open questions remain. Particularly, there are not …

Microelectronic devices with high integration level and functional complexity are always
requiring larger diameter and more perfect Czochralski (CZ) silicon wafers. Therefore, the …

Experimental and theoretical techniques are used to investigate the impact of tin doping on
the formation and the thermal stability of oxygen-and carbon-related defects in electron …

The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …

Germanium is an important mainstream material for many nanoelectronic and sensor
applications. The understanding of diffusion at an atomic level is important for fundamental …