Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …

Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …

In this work an extensive characterization over XeCl multishot laser irradiation was
performed at different energy densities and with different thicknesses of graphitic coating …

This work describes the development of a new method for ion implantation induced crystal
damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns …

Pulsed laser annealing (PLA, 527 nm, 200-ns pulse, Nd: YLF laser) was used to activate
phosphorous-implanted C-face SiC and repair lattice damage. The electrical and structural …

The dependence on the annealing temperature, T ann, of the Al asymptotic substitutional
fraction φ∞ in implanted silicon carbide (4H–SiC), is addressed from a statistical …

This paper discusses a novel annealing technique for 4H-SiC implants which involves the
use of pulsed XeCl laser (l= 308 nm). In particular, an absorbing graphitic coating is used to …

Technological control of doped regions is exceptionally important for all semiconductor
devices. For the wide bandgap semiconductor silicon carbide, the activation state of dopants …

In this work, we studied the potential of using thin films deposited by plasma-enhanced
chemical vapor deposition (PECVD) for two main purposes: introducing an n-type …