Breaking the bandwidth limit: A review of broadband Doherty power amplifier design for 5G
G Nikandish, RB Staszewski… - IEEE Microwave …, 2020 - ieeexplore.ieee.org
The next generation wireless network, 5G, is expected to provide ubiquitous connections to
billions of devices as well as to unlock many new services through multigigabit-per-second …
billions of devices as well as to unlock many new services through multigigabit-per-second …
An overview on analyses and suppression methods of trapping effects in AlGaN/GaN HEMTs
R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan… - IEEE Access, 2021 - ieeexplore.ieee.org
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …
power and high frequency applications. However, the existence of damages, defects and …
A 24–29.5-GHz highly linear phased-array transceiver front-end in 65-nm CMOS supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G new radio
Y Yi, D Zhao, J Zhang, P Gu, Y Chai… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-
wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and …
wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and …
A 5-GHz WLAN RF CMOS power amplifier with a parallel-cascoded configuration and an active feedback linearizer
This paper presents a highly linear cascode power amplifier (PA) for 5-GHz 802.11 ac
(wireless local area network) WLAN applications, which is fabricated with a 0.13-μm …
(wireless local area network) WLAN applications, which is fabricated with a 0.13-μm …
A highly linear GaN MMIC Doherty power amplifier based on phase mismatch induced AM–PM compensation
This article presents a highly linear Doherty power amplifier (DPA) based on phase
mismatch. When output phase mismatch (OPM) is introduced, ie, the phase shift of the …
mismatch. When output phase mismatch (OPM) is introduced, ie, the phase shift of the …
Processes of AM-PM distortion in large-signal single-FET amplifiers
Using an appropriate formulation of field-effect transistor (FET) current as a nonlinear
function of terminal voltages, and a simplified model of gain compression in common source …
function of terminal voltages, and a simplified model of gain compression in common source …
Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach
This article reports a comparative study of two artificial neural network structures and
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
A broadband fully integrated power amplifier using waveform shaping multi-resonance harmonic matching network
In this article, we propose a broadband fully integrated power amplifier (PA) using a
waveform shaping harmonic matching network. A comprehensive theory is developed for …
waveform shaping harmonic matching network. A comprehensive theory is developed for …
The impact of long-term memory effects on the linearizability of GaN HEMT-based power amplifiers
This article presents how the emission time constant of deep-level traps is responsible for
the achievable linearity (linearizability) degradation of gallium nitride high electron mobility …
the achievable linearity (linearizability) degradation of gallium nitride high electron mobility …
Broadband fully integrated GaN power amplifier with minimum-inductance BPF matching and two-transistor AM-PM compensation
GR Nikandish, RB Staszewski… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this paper, we present a design technique for broadband fully integrated GaN power
amplifiers (PAs), with merged bandpass filter (BPF) and AM-PM compensation. The …
amplifiers (PAs), with merged bandpass filter (BPF) and AM-PM compensation. The …