Composition dependence of photoluminescence of GaAs1− xBix alloys
Room temperature photoluminescence (PL) spectra have been measured for GaAs 1− x Bi x
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …
Clustering effects in Ga (AsBi)
S Imhof, A Thränhardt, A Chernikov, M Koch… - Applied Physics …, 2010 - pubs.aip.org
The photoluminescence from a Ga (AsBi) sample is investigated as a function of pump
power and lattice temperature. The disorder-related features are analyzed using a Monte …
power and lattice temperature. The disorder-related features are analyzed using a Monte …
Electron hall mobility in GaAsBi
We present measurements of the electron Hall mobility in n-type GaAs 1− x Bi x epilayers.
We observed no significant degradation in the electron mobility with Bi incorporation in …
We observed no significant degradation in the electron mobility with Bi incorporation in …
Catalyst‐Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High‐Performance Electronics and Optoelectronics
Abstract 1D materials have attracted significant research interest due to their unique
quantum confinement effects and edge‐related properties. Atomically thin 1D nanoribbons …
quantum confinement effects and edge‐related properties. Atomically thin 1D nanoribbons …
Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAsBi
We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− xBix
We investigate the electronic properties of Ga As 1− x Bi x by photoluminescence at variable
temperature (T= 10–430 K) and high magnetic field (B= 0–30 T). In Ga As 0.981 Bi 0.019 …
temperature (T= 10–430 K) and high magnetic field (B= 0–30 T). In Ga As 0.981 Bi 0.019 …
Absorption Characteristics of Diodes in the Near-Infrared
CJ Hunter, F Bastiman, AR Mohmad… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
The absorption properties of a series of \rmGaAs_1-x\rmBi_x layers with ∼6\% Bi have been
systematically investigated by measuring photocurrent spectra in pin diode structures grown …
systematically investigated by measuring photocurrent spectra in pin diode structures grown …
Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
GaAsBi nanowires represent a novel and promising material platform for future nano-
photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a …
photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a …
Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt
O Khvostikova, A Vlasov, B Ber, R Salii… - Scientific Reports, 2024 - nature.com
Thick smoothly graded AlxGa1− xAs layers (50–100 µm) are used in light-emitting diode
structures and also for creation of high-power photovoltaic converters with side-input of laser …
structures and also for creation of high-power photovoltaic converters with side-input of laser …
Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs
The thermodynamics of Bi incorporation into bulk and epitaxial GaAs was studied using
density functional theory (DFT) and anharmonic elasticity calculations. The equilibrium …
density functional theory (DFT) and anharmonic elasticity calculations. The equilibrium …