Colloquium: Topological band theory

A Bansil, H Lin, T Das - Reviews of Modern Physics, 2016 - APS
The first-principles band theory paradigm has been a key player not only in the process of
discovering new classes of topologically interesting materials, but also for identifying salient …

Topological materials

B Yan, SC Zhang - Reports on Progress in Physics, 2012 - iopscience.iop.org
Recently, topological insulator materials have been theoretically predicted and
experimentally observed in both 2D and 3D systems. We first review the basic models and …

Phase change thin films for non-volatile memory applications

A Lotnyk, M Behrens, B Rauschenbach - Nanoscale Advances, 2019 - pubs.rsc.org
The rapid development of Internet of Things devices requires real time processing of a huge
amount of digital data, creating a new demand for computing technology. Phase change …

Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications

Y Xu, X Wang, W Zhang, L Schäfer, J Reindl… - Advanced …, 2021 - Wiley Online Library
Tailoring the degree of disorder in chalcogenide phase‐change materials (PCMs) plays an
essential role in nonvolatile memory devices and neuro‐inspired computing. Upon rapid …

Disordered topological insulators: a non-commutative geometry perspective

E Prodan - Journal of Physics A: Mathematical and Theoretical, 2011 - iopscience.iop.org
The progress in the field of topological insulators is impetuous, being sustained by a suite of
exciting results on three fronts: experiment, theory and numerical simulation. Very often, the …

Temperature dependent evolution of local structure in chalcogenide-based superlattices

A Lotnyk, I Hilmi, M Behrens, B Rauschenbach - Applied Surface Science, 2021 - Elsevier
Interfacial phase change memory utilizing chalcogenide-based superlattices (CSLs) offers
outstanding device performance and is an emerging contender to replace conventional …

Topological Insulating in Phase-Change Superlattice

B Sa, J Zhou, Z Sun, J Tominaga, R Ahuja - Physical review letters, 2012 - APS
GeTe/Sb 2 Te 3 superlattice phase-change memory devices demonstrated greatly improved
performance over that of Ge 2 Sb 2 Te 5, a prototype record media for phase-change …

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

A Lotnyk, T Dankwort, M Behrens, L Voß, S Cremer… - Acta Materialia, 2024 - Elsevier
Abstract Ge-Sb-Te (GST) thin films are emerging materials for various non-volatile memory
applications. The compounds contain a huge number of vacancies that play important roles …

Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb2Te3 Superlattices

AV Kolobov, P Fons, Y Saito, J Tominaga - ACS omega, 2017 - ACS Publications
Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is
currently a key element of various electronics and portable systems. An important step in the …

Topological quantum matter to topological phase conversion: Fundamentals, materials, physical systems for phase conversions, and device applications

MMH Polash, S Yalameha, H Zhou, K Ahadi… - Materials Science and …, 2021 - Elsevier
The spin-orbit coupling field, an atomic magnetic field inside a Kramers' system, or discrete
symmetries can create a topological torus in the Brillouin Zone and provide protected edge …