Laser gain regions using quantum dots have numerous improvements over quantum wells
for photonic integration. Their atom-like density of states gives them unique gain properties …

Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via
direct epitaxial growth is a promising solution for on-chip light sources. Recent …

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …

Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact
light source with unique advantages of ultralow energy consumption and small footprint for …

With recent developments in high‐speed and high‐power electronics and Si‐based
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …

We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot
(QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate …

Electrically pumped lasers directly grown on silicon are key devices interfacing silicon
microelectronics and photonics. We report here, for the first time, to the best of our …