Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides
Abstract The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …
Recent progress of laser processing technology in micro-LED display manufacturing: A review
L Song, X Yong, P Zhang, S Song, K Chen… - Optics & Laser …, 2025 - Elsevier
Micro-LED undoubtedly stands out as a highly anticipated technology when it comes to the
innovation of future display technologies. Micro-LED technology surpasses traditional …
innovation of future display technologies. Micro-LED technology surpasses traditional …
Lattice structure and bandgap control of 2D GaN grown on graphene/Si heterostructures
W Wang, Y Li, Y Zheng, X Li, L Huang, G Li - Small, 2019 - Wiley Online Library
Abstract 2D group‐III nitride materials have shown a great promise for applications in
optoelectronic devices thanks to their thickness‐dependent properties. However, the …
optoelectronic devices thanks to their thickness‐dependent properties. However, the …
Molybdenum disulfide modified by laser irradiation for catalyzing hydrogen evolution
As a low-cost and promising electrocatalyst for hydrogen evolution reaction (HER),
molybdenum disulfide (MoS2) possesses both an inert basal plane and catalytically active …
molybdenum disulfide (MoS2) possesses both an inert basal plane and catalytically active …
InAlN/GaN HEMT on Si with fmax= 270 GHz
Device surface properties are critical for its performance such as channel electron density,
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …
Interface dipole and band bending in the hybrid heterojunction
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel
paths toward nanoelectronic devices with engineered features. Here, we study the electronic …
paths toward nanoelectronic devices with engineered features. Here, we study the electronic …
Morphology-controlled reststrahlen band and infrared plasmon polariton in gan nanostructures
Due to ultrabright and stable blue light emission, GaN has emerged as one of the most
famous semiconductors of the modern era, useful for light-emitting diodes, power …
famous semiconductors of the modern era, useful for light-emitting diodes, power …
Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters
MA Khan, JP Bermundo, Y Ishikawa, H Ikenoue… - …, 2020 - iopscience.iop.org
Mg-doped p-type semiconducting aluminium-gallium-nitride hole source layer (p-AlGaN
HSL) materials are quite promising as a source of hole'p'carriers for the ultraviolet-B (UVB) …
HSL) materials are quite promising as a source of hole'p'carriers for the ultraviolet-B (UVB) …
Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors
We report on high-responsivity metal-semiconductor-metal (MSM) structure based ultraviolet
(UV) GaN photodetectors fabricated on various GaN nanostructures such as porous …
(UV) GaN photodetectors fabricated on various GaN nanostructures such as porous …
Fast growth of GaN epilayers via laser-assisted metal–organic chemical vapor deposition for ultraviolet photodetector applications
In this study, we successfully developed a carbon dioxide (CO2)-laser-assisted metal–
organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality …
organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality …