[HTML][HTML] Research progress on the formation, detection methods and application in photocatalytic reduction of CO2 of oxygen vacancy

Y Sun, G Li, W Sun, X Zhou - Journal of CO2 Utilization, 2023 - Elsevier
Photocatalytic reduction of CO 2 to valuable carbon products is a very attractive method for
energy regeneration and storage, which is also expected to reduce increasing carbon …

[HTML][HTML] Wide bandgap semiconductor-based integrated circuits

S Yuvaraja, V Khandelwal, X Tang, X Li - Chip, 2023 - Elsevier
Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

Electronic structure of low‐temperature solution‐processed amorphous metal oxide semiconductors for thin‐film transistor applications

J Socratous, KK Banger, Y Vaynzof… - Advanced functional …, 2015 - Wiley Online Library
The electronic structure of low temperature, solution‐processed indium–zinc oxide thin‐film
transistors is complex and remains insufficiently understood. As commonly observed, high …

Hydrogen-doping-enabled boosting of the carrier mobility and stability in amorphous IGZTO transistors

J Lee, CH Choi, T Kim, J Hur, MJ Kim… - … Applied Materials & …, 2022 - ACS Publications
This study investigated the effect of hydrogen (H) on the performance of amorphous In–Ga–
Zn–Sn oxide (a-In0. 29Ga0. 35Zn0. 11Sn0. 25O) thin-film transistors (TFTs). Ample H in …

A sustainable approach to flexible electronics with zinc‐tin oxide thin‐film transistors

C Fernandes, A Santa, Â Santos… - Advanced Electronic …, 2018 - Wiley Online Library
Zinc‐tin oxide (ZTO) is widely invoked as a promising indium and gallium‐free alternative for
amorphous oxide semiconductor based thin‐film transistors (TFTs). The main bottleneck of …

Effect of oxygen content on current stress-induced instability in bottom-gate amorphous InGaZnO thin-film transistors

S Choi, JY Kim, H Kang, D Ko, J Rhee, SJ Choi… - Materials, 2019 - mdpi.com
The effect of oxygen content on current-stress-induced instability was investigated in bottom-
gate amorphous InGaZnO (a-IGZO) thin-film transistors. The observed positive threshold …

Analysis of ultrahigh apparent mobility in oxide field‐effect transistors

C Chen, BR Yang, G Li, H Zhou, B Huang… - Advanced …, 2019 - Wiley Online Library
For newly developed semiconductors, obtaining high‐performance transistors and
identifying carrier mobility have been hot and important issues. Here, large‐area fabrications …

Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

MDH Chowdhury, M Mativenga, JG Um… - … on Electron Devices, 2015 - ieeexplore.ieee.org
We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO)
thin-film transistors (TFTs) with single-layer (SiO 2) and bilayer (SiO 2/SiN x) passivation …

A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

MG Kim, JH Jeong, JH Ma, MH Park, S Kim… - Journal of Materials …, 2023 - pubs.rsc.org
In the past few years, there has been growing interest in ultraviolet (UV) photodetectors for
various applications. A key requirement for UV photodetectors is the ability to exclusively …

Effects of nitrogen and hydrogen codoping on the electrical performance and reliability of InGaZnO thin-film transistors

A Abliz, Q Gao, D Wan, X Liu, L Xu, C Liu… - … Applied Materials & …, 2017 - ACS Publications
Despite intensive research on improvement in electrical performances of ZnO-based thin-
film transistors (TFTs), the instability issues have limited their applications for complementary …