Role of strain on the coherent properties of GaAs excitons and biexcitons
Polarization-dependent two-dimensional Fourier-transform spectroscopy (2DFTS) is
performed on excitons in strained bulk GaAs layers, probing the coherent response for …
performed on excitons in strained bulk GaAs layers, probing the coherent response for …
Compressive and tensile strain effects on the ultrafast carrier dynamics and transport of gallium arsenide thin films on silicon and magnesium oxide substrates
GAR Catindig, HR Bardolaza, JDE Vasquez… - Optical Materials …, 2022 - opg.optica.org
We investigate strain effects on the ultrafast carrier dynamics and transport of gallium
arsenide films on silicon (GaAs/Si) and magnesium oxide (GaAs/MgO) substrates using …
arsenide films on silicon (GaAs/Si) and magnesium oxide (GaAs/MgO) substrates using …
Multidimensional spectroscopy of magneto-excitons at high magnetic fields
We perform two-dimensional Fourier transform spectroscopy on magneto-excitons in GaAs
at magnetic fields and observe Zeeman splitting of the excitons. The Zeeman components …
at magnetic fields and observe Zeeman splitting of the excitons. The Zeeman components …
Application of external tensile and compressive strain on a single layer In A s/G a A s quantum dot via epitaxial lift‐off
Tensile and compressive strains via epitaxial lift‐off (ELO) techniques were applied on
single‐layer InAs/GaAs quantum dots (QDs). At low temperatures, due to the difference in …
single‐layer InAs/GaAs quantum dots (QDs). At low temperatures, due to the difference in …
[HTML][HTML] Coherent two-dimensional Fourier transform spectroscopy using a 25 Tesla resistive magnet
We performed nonlinear optical two-dimensional Fourier transform spectroscopy
measurements using an optical resistive high-field magnet on GaAs quantum wells …
measurements using an optical resistive high-field magnet on GaAs quantum wells …
Photo-carrier dynamics of MBE-grown GaAs on silicon studied by optical-pump terahertz-probe
GaAs films were grown on Si (100) substrates with a “two-step buffer” growth technique
using molecular beam epitaxy, wherein a low temperature GaAs buffer is grown at two …
using molecular beam epitaxy, wherein a low temperature GaAs buffer is grown at two …
[图书][B] High-Order Sideband Generation for Creating Optical Frequency Combs and Probing Bloch Wavefunctions
DC Valovcin - 2019 - search.proquest.com
High-order sideband generation (HSG) is a recently discovered phenomenon in
semiconductors simultaneously driven by a weak near infrared (NIR) laser and a strong THz …
semiconductors simultaneously driven by a weak near infrared (NIR) laser and a strong THz …
[PDF][PDF] Near-field Spectral Imaging of Crystal-phase Heterostructures in GaAs Nanowires Dissertation
HA Senichev - opendata.uni-halle.de
The thesis work is primarily focused on imaging and understanding of optoelectronic
properties of semiconductor materials at the nanometer length scale as a function of their …
properties of semiconductor materials at the nanometer length scale as a function of their …
[图书][B] Multidimensional Coherent Spectroscopy of GaAs Excitons and Quantum Microcavity Polaritons
BL Wilmer - 2016 - search.proquest.com
Light-matter interactions associated with excitons and exciton related complexes are
explored in bulk GaAs and semiconductor microcavities using multidimensional coherent …
explored in bulk GaAs and semiconductor microcavities using multidimensional coherent …