Crystalline silicon (Si) is the key material of the semiconductor industry, with significant
applications for electronic and microelectronic devices. The properties of Si are affected by …

High-energy physics detectors with internal charge multiplication, like Low Gain Avalanche
Detectors (LGADs), that will be used for fast timing in the High Luminosity LHC experiments …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

The trivacancy (V 3) in silicon has been recently shown to be a bistable center in the neutral
charge state, with a fourfold-coordinated configuration, V 3 [FFC], lower in energy than the …

Radiation damage in silicon, caused by the creation of point and cluster defects due to
energetic charged hadrons and neutrons, results in a serious degradation of silicon-sensor …

Results for supercell-size convergence of formation energies and charge transition levels of
vacancy complexes V n (1≤ n≤ 11) in crystalline Si are reported for the ab initio density …

The investigation of defect properties in silicon, including charge transition levels and non-
radiative carrier capture, has been ongoing for over 60 years. However, many questions still …

The elimination of divacancies (V 2) upon isochronal and isothermal annealing has been
studied in oxygen-rich p-type silicon by means of deep level transient spectroscopy (DLTS) …

The influence of the injection of minority charge carriers on the formation of a divalent
bistable defect (DBH) having two energy levels of Ev+ 0.44 eV and Ev+ 0.53 eV in its …

The positions of the electronic levels of an intrinsic bistable defect have been measured
using deep level transient spectroscopy (DLTS) in n-and p-type damaged silicon bipolar …