Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
AN Tallarico, S Stoffels, P Magnone… - IEEE Electron …, 2016 - ieeexplore.ieee.org
In this letter, we report a detailed experimental investigation of the time-dependent
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer
Y Zhong, S Su, X Chen, Y Zhou, J He… - IEEE Electron …, 2019 - ieeexplore.ieee.org
Normally-off HEMTs have been fabricated with regrown p-GaN gate and SiN x passivation
by Low-pressure chemical vapor deposition (LPCVD) using an AlN pre-layer, featuring a …
by Low-pressure chemical vapor deposition (LPCVD) using an AlN pre-layer, featuring a …
Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer
S Gao, Q Zhou, X Liu, H Wang - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
We propose two kinds of stacked materials that effectively yield low drain off-state leakage
current, high off-state breakdown voltage and low current collapse simultaneously in …
current, high off-state breakdown voltage and low current collapse simultaneously in …
Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using …
Y Zhao, C Wang, X Zheng, X Ma, Y He, K Liu, A Li… - Solid-State …, 2020 - Elsevier
Three types of E-mode AlGaN/GaN MIS-HEMTs with different barrier depths and
conventional HEMT were fabricated on the Si substrates. HfO 2 gate insulator with a …
conventional HEMT were fabricated on the Si substrates. HfO 2 gate insulator with a …
High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design
HC Chiu, YS Chang, BH Li, HC Wang… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility
transistor (HEMT) with composite AlN/Al 0.17 Ga 0.83 N/Al 0.3 Ga 0.7 N barrier layers is …
transistor (HEMT) with composite AlN/Al 0.17 Ga 0.83 N/Al 0.3 Ga 0.7 N barrier layers is …
Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric
We have developed a silicon oxynitride (SiON) deposition process using a plasma-
enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal …
enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal …
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering
In this paper, for the first time, we have experimentally demonstrated enhancement mode (e-
mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type …
mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type …
Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics
Z Sun, H Huang, R Wang, N Sun, P Tao… - IEEE Electron …, 2019 - ieeexplore.ieee.org
Enhancement-mode (E-mode) GaN-based MIS-HEMTs still suffer from undeniable gate
leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in …
leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in …