The creation of soft errors due to the propagation of single event transients (SETs) is a
significant reliability challenge in modern CMOS logic. SET concerns continue to be …

Physical mechanisms of single-event effects that result in multiple-node charge collection or
charge sharing are reviewed and summarized. A historical overview of observed circuit …

Heavy-ion broad-beam experiments on a 130 nm CMOS technology have shown
anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in …

There is an invisible enemy that constantly threatens the operation of electronics: ionizing
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …

As of 2013, the gold standard for assessing radiation-hardness assurance (RHA) for a
system, subsystem, or a component is accelerated radiation testing and/or pulsed laser …

With the decrease of the device size, soft error induced by various particles becomes a
serious problem for advanced CMOS technologies. In this paper, we review the evolution of …

Digital single-event transient (SET) measurements in a bulk 65-nm process are compared to
transients measured in 130-nm and 90-nm processes. The measured SET widths are …

This paper presents a SET predictive methodology based on coupled MUSCA SEP3 and
electrical simulations (CADENCE tool). The method is validated by SET measurements on …

In this paper, a novel layout technique for single-event transient (SET) mitigation based on
dummy transistors is proposed. Numerical simulations using technology computer-aided …

Heavy-ion testing of a radiation-hardened-by-design (RHBD) 90 nm dual interlocked cell
(DICE latch) shows significant directional sensitivity results impacting observed cross …