Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD
X Ma, Y Li, Y Le, B Zhang - Materials Science in Semiconductor Processing, 2024 - Elsevier
Single-crystalline hexagonal tantalum pentoxide (δ-Ta 2 O 5) films were grown on LaAlO 3
(010) substrates by MOCVD. A high substrate temperature of 840° C was required to …
(010) substrates by MOCVD. A high substrate temperature of 840° C was required to …
Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTe2 thin film for infrared detection
In the field of electronic and optoelectronic applications, two-dimensional materials are
found to be promising candidates for futuristic devices. For the detection of infrared (IR) light …
found to be promising candidates for futuristic devices. For the detection of infrared (IR) light …
Improvement in structural and dielectric properties of sputtered Ta2O5 thin film by post-deposition annealing
In current years, the growth of high-k dielectric thin films with reduced charge density and
leakage current has drawn tremendous attention for microelectronic devices. Ta2O5 thin film …
leakage current has drawn tremendous attention for microelectronic devices. Ta2O5 thin film …
Modulation of electrical properties of sputtered Ta2O5 films by variation of RF power and substrate temperature
Dielectric thin films are important building blocks of microelectronic devices, and hence,
research on the development of high-k dielectric thin films has drawn tremendous research …
research on the development of high-k dielectric thin films has drawn tremendous research …