Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

We present evidence of homogenization of atomic diffusion properties caused by C and N
interstitials in an equiatomic single-phase high entropy alloy (FeMnNiCoCr). This …

Reliable and accurate knowledge of the physical properties of elementary point defects is
crucial for predictive modeling of the evolution of radiation damage in materials employed in …

We have applied positron annihilation spectroscopy to study the vacancy-type defects in β-
Ga 2 O 3 single crystals. The three different types of crystals were prepared by Czochralski …

Depth-profiled pulsed low-energy positron annihilation lifetime spectroscopy and Doppler
broadening spectroscopy were combined to identify vacancy-related complexes and probe …

The quest for metal-oxide-semiconductor field-effect transistors (MOSFETs) with higher
carrier mobility has triggered great interest in germanium-based MOSFETs. Still, the …

Understanding the mechanisms of damage formation in materials irradiated with energetic
ions is essential for the field of ion-beam materials modification and engineering. Utilizing …

We have applied positron annihilation spectroscopy to study native point defects in Te-
doped n-type and nominally undoped p-type GaSb single crystals. The results show that the …

Abstract Direct-band-gap Germanium-Tin alloys (Ge 1-x Sn x) with high carrier mobilities are
promising materials for nano-and optoelectronics. The concentration of open volume defects …