The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …

A study of intersubband transitions in quantum well infrared detectors working at high
temperatures has been reported. This study allows a greater tunability in the device designs …

We analyze the strain induced changes in the low temperature multisubband electron
mobility mediated through the intersubband interactions in a pseudomorphic GaAs/InxGa1 …

The authors report a two-color quantum well infrared photodetector at room temperature
operating in the mid-and long-wavelength infrared detection. To this purpose, the band …

We investigated the effects of postgrowth thermal annealing on optical properties of
beryllium-doped InAs quantum dot (QD) heterostructures grown by molecular beam epitaxy …

We report on a theoretical study of the relationship between interdiffusion and the
conduction band optical absorption of In (Ga) As/GaAs quantum dots. Quantum dot …

A 40 Gb/s bidirectional optical link using four-channel optical subassembly (OSA) modules
and two different wavelengths for the up-and down-link is demonstrated. Widely separated …

Quantum dot infrared photodetectors have generated significant interest in recent years.
They have the potential to outperform quantum well detectors in terms of normal-incidence …

We report a two-color quantum dot infrared photodetector (QDIP) using double tunneling
barriers (DTBs) on one side of the InGaAs/AlGaAs dots. The two-color detection is achieved …

This paper reports on the evolution of InAs/GaAs quantum dots'(QDs) intermixing process
depending on the QD position with respect to the InGaAs strain reducing layer. The …