High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm
S Bajaj, A Allerman, A Armstrong… - IEEE Electron …, 2017 - ieeexplore.ieee.org
We report on ultra-wide bandgap (UWBG) Al 0.7 Ga 0.3 N channel metal-oxide-
semiconductor field-effect transistors (MOSFETs) grown by metal-organic chemical vapor …
semiconductor field-effect transistors (MOSFETs) grown by metal-organic chemical vapor …
Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
M Miyoshi, M Yamanaka, T Egawa, T Takeuchi - Journal of Crystal Growth, 2019 - Elsevier
nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197 were grown by
metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that …
metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that …
Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire
M Miyoshi, M Yamanaka, T Egawa… - Applied Physics …, 2018 - iopscience.iop.org
AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly
lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor …
lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor …
High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films
L Li, D Hosomi, Y Miyachi, T Hamada… - Applied Physics …, 2017 - pubs.aip.org
We demonstrate high-performance ultraviolet photodetectors (UV-PDs) based on lattice-
matched (LM) InAlN/AlGaN heterostructure field-effect transistors (HFETs) gated by …
matched (LM) InAlN/AlGaN heterostructure field-effect transistors (HFETs) gated by …
A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate
M Miyoshi, M Yamanaka, T Egawa… - Japanese Journal of …, 2019 - iopscience.iop.org
Single-layer AlInN films with a film thickness of approximately 300 nm were grown on a c-
plane free-standing (FS) GaN substrate by metalorganic chemical vapor deposition. The …
plane free-standing (FS) GaN substrate by metalorganic chemical vapor deposition. The …
Room-temperature nonradiative recombination lifetimes in c-plane Al1− xInxN epilayers nearly and modestly lattice-matched to GaN (0.11≤ x≤ 0.21)
LY Li, K Shima, M Yamanaka, T Egawa… - Journal of Applied …, 2022 - pubs.aip.org
Lattice-matched Al 1− x In x N/GaN heterostructures with InN mole fraction (x) of 0.18 have
attracted considerable interest for use in GaN-based optoelectronic devices. Because the …
attracted considerable interest for use in GaN-based optoelectronic devices. Because the …
Reduced nonradiative recombination rates in c-plane Al0. 83In0. 17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
LY Li, K Shima, M Yamanaka, K Kojima… - Applied Physics …, 2021 - pubs.aip.org
A record-long room-temperature photoluminescence (PL) lifetime ( τ PL RT) of
approximately 70 ps was obtained for the sub-bandgap 3.7 eV emission band of a 300-nm …
approximately 70 ps was obtained for the sub-bandgap 3.7 eV emission band of a 300-nm …
Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage
JJ Freedsman, T Hamada, M Miyoshi… - IEEE Electron Device …, 2017 - ieeexplore.ieee.org
A normally-Off metal-oxide-semiconductor field-effect transistor (MOS-FET) is proposed by
using AlInN/AlGaN heterostructure grown on silicon. The AlGaN channel MOSFET with Al 2 …
using AlInN/AlGaN heterostructure grown on silicon. The AlGaN channel MOSFET with Al 2 …
Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers
D Hosomi, H Chen, T Egawa… - Japanese Journal of …, 2018 - iopscience.iop.org
In order to improve the thermal stability in AlGaN-channel two-dimensional electron gas
(2DEG) heterostructures, we newly designed strain-controlled quaternary AlGaInN barrier …
(2DEG) heterostructures, we newly designed strain-controlled quaternary AlGaInN barrier …
Electronic transport properties in AlInGaN/AlGaN heterostructures
Y Li, J Zhang, J Xue, G Liu, R Quan… - … status solidi (a), 2018 - Wiley Online Library
The AlGaN‐channel III‐N heterostructure effect transistor (HFET) devices with high
breakdown voltage and acceptable on‐resistance has shown great potential for next …
breakdown voltage and acceptable on‐resistance has shown great potential for next …