A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
Field effect enhancement in buffered quantum nanowire networks
III–V semiconductor nanowires have shown great potential in various quantum transport
experiments. However, realizing a scalable high-quality nanowire-based platform that could …
experiments. However, realizing a scalable high-quality nanowire-based platform that could …
Growth and characterization of GaN-based LED wafers on La 0.3 Sr 1.7 AlTaO 6 substrates
W Wang, H Yang, G Li - Journal of Materials Chemistry C, 2013 - pubs.rsc.org
High-quality GaN-based light emitting diode (LED) wafers on La0. 3Sr1. 7AlTaO6
(LSAT)(111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the …
(LSAT)(111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the …
[HTML][HTML] Anisotropic strain relaxation through prismatic and basal slip in α-(Al, Ga) 2O3 on R-plane Al2O3
M Grundmann, M Lorenz - APL Materials, 2020 - pubs.aip.org
Pseudomorphic and partially relaxed layers of corundum phase (Al, Ga) 2 O 3 epilayers on
(01.2)-oriented Al 2 O 3 fabricated by pulsed laser deposition (PLD) are investigated. An …
(01.2)-oriented Al 2 O 3 fabricated by pulsed laser deposition (PLD) are investigated. An …
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
Cathodoluminescence imaging was used to study the onset of plastic relaxation and critical
thickness for misfit dislocation (MD) formation by basal plane (BP) or nonbasal plane (NBP) …
thickness for misfit dislocation (MD) formation by basal plane (BP) or nonbasal plane (NBP) …
Strain states and relaxation for -(AlGa)O thin films on prismatic planes of -AlO in the full composition range: Fundamental difference of a- and m …
Pseudomorphic and relaxed α α-(Al _x x Ga _ 1-x 1-x) _2 2 O _3 3 thin films are grown by
combinatorial pulsed laser deposition in the entire composition range on prismatic a-and m …
combinatorial pulsed laser deposition in the entire composition range on prismatic a-and m …
Trace analysis of non-basal plane misfit stress relaxation in (202¯ 1) and (303¯ 1¯) semipolar InGaN/GaN heterostructures
We have studied primary and secondary slip systems in the relaxation of lattice mismatch
stresses in (20 2 1) and (30 3 1) semipolar In x Ga 1− x N/GaN heterostructures by analyzing …
stresses in (20 2 1) and (30 3 1) semipolar In x Ga 1− x N/GaN heterostructures by analyzing …
[HTML][HTML] Brittle fracture toughnesses of GaN and AlN from first-principles surface-energy calculations
Cracks are a major limitation for the growth of III-nitride bulk crystals and thick epitaxial films.
The propensity for a crack to propagate on a given plane is determined by the anisotropic …
The propensity for a crack to propagate on a given plane is determined by the anisotropic …
Stress relaxation of AlGaN on nonpolar m-plane GaN substrate
Y Lin, H Sena, M Frentrup, M Pristovsek… - Journal of Applied …, 2023 - pubs.aip.org
The stress relaxation with increasing thickness of metal-organic vapor phase epitaxy grown
Al 0.19 Ga 0.81 N on quasi-bulk (10 1 0) m-plane GaN substrates was investigated by x-ray …
Al 0.19 Ga 0.81 N on quasi-bulk (10 1 0) m-plane GaN substrates was investigated by x-ray …
[HTML][HTML] Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched
semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs …
semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs …