A review of lead-free solders for electronics applications
Ever since RoHS was implemented in 2006, Sn3. 0Ag0. 5Cu (SAC305) has been the
primary lead-free solder for attaching electronic devices to printed circuit boards (PCBs) …
primary lead-free solder for attaching electronic devices to printed circuit boards (PCBs) …
A review on die attach materials for SiC-based high-temperature power devices
Recently, high-temperature power devices have become a popular discussion topic
because of their various potential applications in the automotive, down-hole oil and gas …
because of their various potential applications in the automotive, down-hole oil and gas …
Silicon carbide benefits and advantages for power electronics circuits and systems
Silicon offers multiple advantages to power circuit designers, but at the same time suffers
from limitations that are inherent to silicon material properties, such as low bandgap energy …
from limitations that are inherent to silicon material properties, such as low bandgap energy …
Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material
JG Bai, ZZ Zhang, JN Calata… - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
A nanoscale silver paste containing 30-nm silver particles that can be sintered at 280degC
was made for interconnecting semiconductor devices. Sintering of the paste produced a …
was made for interconnecting semiconductor devices. Sintering of the paste produced a …
Low-Temperature Sintering of Nanoscale Silver Paste for Attaching Large-Area Chips
A low-temperature sintering technique enabled by a nanoscale silver paste has been
developed for attaching large-area (> 100 mm 2) semiconductor chips. This development …
developed for attaching large-area (> 100 mm 2) semiconductor chips. This development …
Comparative study of silicon-based ultraviolet photodetectors
L Shi, S Nihtianov - IEEE Sensors Journal, 2012 - ieeexplore.ieee.org
This review article presents a comparative study of different silicon-based ultraviolet (UV)
photodetector technologies. After a brief introduction and classification of UV photodetectors …
photodetector technologies. After a brief introduction and classification of UV photodetectors …
A 60-kW 3-kW/kg five-level T-type SiC PV inverter with 99.2% peak efficiency
A silicon carbide (SiC) T-type LCL inverter can achieve smaller device loss than two-level
topology, however, its improvement on power density is limited by current ripple loss on …
topology, however, its improvement on power density is limited by current ripple loss on …
High-temperature operation of SiC power devices by low-temperature sintered silver die-attachment
JG Bai, J Yin, Z Zhang, GQ Lu… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
In this paper, we present the realization of high-temperature operation of SiC power
semiconductor devices by low-temperature sintering of nanoscale silver paste as a novel die …
semiconductor devices by low-temperature sintering of nanoscale silver paste as a novel die …
Transparent metal-oxide nanowires and their applications in harsh electronics
Due to their excellent physical and chemical properties, one-dimensional (1D) transparent
metal-oxide nanostructures, especially nanowires (NWs), are widely considered to be …
metal-oxide nanostructures, especially nanowires (NWs), are widely considered to be …
A comparative performance study of a 1200 V Si and SiC MOSFET intrinsic diode on an induction heating inverter
J Jordan, V Esteve, E Sanchis-Kilders… - … on Power Electronics, 2013 - ieeexplore.ieee.org
This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and
silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The …
silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The …