AlGaN/GaN high electron mobility transistor for various sensing applications: a review
AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non …
desired for sensing regime applications due to their extraordinary chemical stability, non …
Nanotransistor-based gas sensing with record-high sensitivity enabled by electron trapping effect in nanoparticles
Highly sensitive, low-power, and chip-scale H 2 gas sensors are of great interest to both
academia and industry. Field-effect transistors (FETs) functionalized with Pd nanoparticles …
academia and industry. Field-effect transistors (FETs) functionalized with Pd nanoparticles …
Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector with High Responsivity and High Detectivity
K Zhou, L Shan, Y Zhang, D Lu, Y Ma… - IEEE Electron …, 2023 - ieeexplore.ieee.org
AlGaN/GaN high electron mobility transistor (HEMT) has attracted great attention in
ultraviolet photodetectors (UVPDs) due to the ultrahigh responsivity and high photocurrent …
ultraviolet photodetectors (UVPDs) due to the ultrahigh responsivity and high photocurrent …
Sensitivity analysis of Al0. 3Ga0. 7N/GaN dielectric modulated MOSHEMT biosensor
Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
Unveiling the self-heating and process variation reliability of a junctionless FinFET-based hydrogen gas sensor
Field-effect-transistor-based sensors are essential for environmental monitoring, industrial
analyte detection, medical diagnosis, etc. This letter unveiled the process variation, self …
analyte detection, medical diagnosis, etc. This letter unveiled the process variation, self …
Gate oxide induced reliability assessment of junctionless FinFET-based hydrogen gas sensor
Gate oxide plays a crucial role in the performance of nano-scaled emerging devices. In FET-
based sensors, gate-oxide-induced reliability analysis is essential for credible sensing. In …
based sensors, gate-oxide-induced reliability analysis is essential for credible sensing. In …
Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN
Embedding p-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent
epitaxial layers is a key for designing various multi-junction structures with high precision …
epitaxial layers is a key for designing various multi-junction structures with high precision …
Radiation-sensitive AlGaN/GaN MOS-HEMT-based dosimeter
R Mann, S Rewari, P Pal, S Sharma… - Journal of Electronic …, 2022 - Springer
Abstract An AlGaN/GaN MOS-HEMT (metal oxide semiconductor–high electron mobility
transistor)-based dosimeter has been proposed to demonstrate and evaluate the impact of …
transistor)-based dosimeter has been proposed to demonstrate and evaluate the impact of …
GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity
A Varghese, A Eblabla, Z Wu, SU Ghozati… - IEEE Sensors …, 2022 - ieeexplore.ieee.org
This work presents performance evaluation of GaN High Electron Mobility Transistor (HEMT)
based ultraviolet (UV) detector on Si substrate. In addition to the fabrication and …
based ultraviolet (UV) detector on Si substrate. In addition to the fabrication and …
Junctionfree gate stacked vertical TFET hydrogen sensor at room temperature
Presented through this work is an investigation of junctionfree gate-stacked (SiO 2+ high-k)
double gated vertical tunnel field-effect transistor (JF-GS-VTFET) with focus on its hydrogen …
double gated vertical tunnel field-effect transistor (JF-GS-VTFET) with focus on its hydrogen …