Static random access memory (SRAM) bit cell is a prominent element for portable devices.
The popularity of sleek designs and demand for longer battery life has driven memory cell …

To reduce energy consumption, it is possible to operate embedded systems at sub-nominal
conditions (eg, reduced voltage, limited eDRAM refresh rate) that can introduce bit errors in …

Gain-cell embedded dynamic random access memory (GC-eDRAM) has emerged as a
suitable choice for embedded memory implementation due to its high density, low leakage …

This paper presents a pseudo-static gain cell (PS-GC) with extended retention time for an
embedded dynamic random-access memory (eDRAM) macro for analog processing-in …

This paper presents an ultra-low power 3T gain-cell embedded DRAM (GC-eDRAM) cell in
fin field-effect transistor (FinFET). This memory structure uses fast and low leakage FinFET …

Gain-cell embedded DRAM (GC-eDRAM) is a dense, low power option for embedded
memory implementation, supporting low supply voltages; however, it suffers from limited …

Conventional static random‐access memory (SRAM) suffers from high leakage power in
advanced complementary metal‐oxide‐semiconductor nodes. Meanwhile, gain‐cell …

In the given paper, the performance and durability of two 9T SRAM cells, namely 9T-1 and
9T-2 with two 7T SRAM cells, namely 7T-1 and 7T-2 are examined and then contrasted …

Communication systems have been associated with an inherent fault tolerance to hardware
reliability issues. Therefore, many publications have studied the impact of such issues on, for …

Gain-cell (GC) embedded dynamic random-access memory (eDRAM) provides high density,
low leakage power, small size, and two-port functionality. However, GC-eDRAM requires …