The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure
In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping
memory device by RF magnetron sputtering technique. The structural and electrical …
memory device by RF magnetron sputtering technique. The structural and electrical …