As newer generations of electric vehicles get to market, more electric vehicles with out-of-
use components will emerge. Some of these electric vehicles will have components that no …

Silicon carbide has the potential to replace silicon in a large spectrum of applications. To do
so, SiC needs superior performance, a reasonable price and good reliability. However, there …

An accurate temperature estimation is a substantial necessity to evaluate the outcome of a
power cycling test. For devices with a forward biased pn‐junction in the main current path …

This paper aims to provide a guideline with respect to a reproducible thermal transient
measurement for SiC MOSFETs. Although the thermal transient measurement based on …

Thermal transient measurement (TTM) utilizes temperature-sensitive electrical parameters
(TSEP) to analyze the thermal structure of power semiconductor devices. However, the …

Thermal transient measurement based on source-drain voltage is a standard method to
characterize thermal properties of silicon semiconductors but is doubtful to be directly …

Silicon carbide (SiC) MOSFET reliability becomes crucial to their widespread applications.
Many works have been conducted on SiC MOSFET to analyze the degradation of bond …

The application of established test routines like power cycling to wide bandgap devices may
be not as straightforward as it seems: When power cycling silicon carbide MOSFETs, the …

When power cycling SiC MOSFETs steep temperature gradients intendedly lead to thermo-
mechanical stress degrading the package. The observation of package degradation …

Junction temperature sensing is an integral part of both on-line and off-line condition
monitoring where direct access the bare die surface is not available. Given a defined power …