Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation
In this paper, a charge plasma-based inverted T-shaped source-metal dual line-tunneling
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …
Doping and dopingless tunnel field effect transistor
P Singh, DP Samajdar… - 2021 6th International …, 2021 - ieeexplore.ieee.org
For Low power consumption, an emerging device that depends on lowering the supply
voltage with downscaling is proposed which is known as the Tunnel-FET (TFET). In general …
voltage with downscaling is proposed which is known as the Tunnel-FET (TFET). In general …
Ge-source based L-shaped tunnel field effect transistor for low power switching application
In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET)
has been analyzed with different engineering techniques such as bandgap engineering …
has been analyzed with different engineering techniques such as bandgap engineering …
Impact of temperature on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region
In this script, authors affirm a novel structure of tunnel FET in which a lightly doped channel
region completely bounds the ultra-thin finger-like source region to enhance the tunneling …
region completely bounds the ultra-thin finger-like source region to enhance the tunneling …
Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement
H Aghandeh, SAS Ziabari - Superlattices and Microstructures, 2017 - Elsevier
This study investigates a junctionless tunnel field-effect transistor with a dual material gate
and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the …
and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the …
Design and investigation of f-shaped tunnel fet with enhanced analog/rf parameters
In this manuscript, a novel physically doped single gate F-shaped tunnel FET is simulated
and optimized. The designed configuration is well optimized and analyzed for different …
and optimized. The designed configuration is well optimized and analyzed for different …
Non-destructive label-free biomaterials detection using tunneling carbon nanotube-based biosensor
Label-free monitoring of biomaterials has become spotlight topic for the advanced nano-
biosensing fields. In this regard, a non-destructive doping-less tunneling carbon nanotube …
biosensing fields. In this regard, a non-destructive doping-less tunneling carbon nanotube …
Electrical performance of InAs/GaAs0. 1Sb0. 9 heterostructure junctionless TFET with dual-material gate and Gaussian-doped source
H Xie, H Liu, S Chen, T Han… - … Science and Technology, 2020 - iopscience.iop.org
In this work, we demonstrate the design of a dual-material gate and Gaussian-doped source
heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET). Unlike the …
heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET). Unlike the …
Implementation of Logic Gates Using Drain Engineering Dual Metal Gate-Based Charge Plasma TFET (DE-DMG-CP-TFET).
N Mahoviya, P Singh, DS Yadav - Nano, 2023 - search.ebscohost.com
For digital applications, researchers are exploring the use of Tunnel Field-Effect Transistors
(TFETs) as an alternative to Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) …
(TFETs) as an alternative to Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) …