We review the recent developments in GaAs-based 1.55-mum lasers grown by molecular
beam epitaxy (MBE). While materials growth is challenging, the growth window appears to …

We present a comprehensive theoretical and experimental analysis of 1.3-μm
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …

Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers
were found to contain Ga vacancies in defect complexes. The density of the vacancy …

An overview of our present knowledge and understanding of defects in dilute nitrides will be
provided and their important roles in determining the success of dilute nitrides for …

A brief review on our present knowledge of optical and magneto-optical properties of III–V–N
alloys, in particular, Ga (In) NAs alloys with low nitrogen compositions is given. The main …

We provide a brief review of our recent results from optically detected magnetic resonance
studies of grown-in non-radiative defects in two most important dilute nitride systems—Ga …

This paper summarises results of the epitaxial growth of Ga (NAsBi) by metal–organic
vapour phase epitaxy (MOVPE) and the subsequent optical and structural characterisations …

In this paper we review our recent results from optical and magneto-optical studies which
have allowed identification of the dominant radiative and some non-radiative (NR) …

We present a study of melt grown dilute nitride InGaAsN layers by x-ray photoelectron
spectroscopy (XPS), Raman and photoluminescence (PL) spectroscopy. The purpose of the …

Molecular beam epitaxy (MBE) is an elegant material growth technique that is most simply
described as a very refined form of vacuum evaporation or physical vapor deposition, with …